KTA2015_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

RoHS
KTA2015
KTA2015 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
0.1 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-0.5 A
Collector-base voltage
O _V(BR)CBO:
-35 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
LE _{Collector-emitter saturation voltage}
E _{Base-emitter voltage}
Transition frequency
J _{Collector output capacitance}
Symbol
Test conditions
MIN TYP MAX UNIT
V(BR)CBO
Ic=-100µA, IE=0
-35
V
V(BR)CEO
Ic=-1mA, IB=0
-30
V
V(BR)EBO
IE=-100µA, IC=0
-5
V
ICBO
VCB=-35V, IE=0
-0.1 µA
IEBO
VEB=-5V, IC=0
-0.1 µA
hFE(1)
hFE(2)
VCE=-1V, IC=-100mA
VCE=-6V, IC=-400mA
70
O 25
Y 40
VCE(sat)
IC=-100mA, IB=-10mA
240
-0.25 V
VBE
VCE=-1V, IC=-100mA
-1
V
fT
VCE=-6V, IC=-20mA
200
MHz
Cob
VCB=-6V, IE=0, f=1MHz
13
pF
E_{CLASSIFICATION OF hFE(1)}
WRank
O
Y
Range
70-140
120-240
Marking
ZO
ZY
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]