KTA1666_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

RoHS
KTA1666
KTA1666 TRANSISTOR (PNP)
SOT-89
D FEATURES
Power dissipation
T _PCM:
0.5 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
Collector-base voltage
-2 A
O _V(BR)CBO:
-50 V
Operating and storage junction temperature range
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
C _{TJ, Tstg: -55℃ to +150℃}
ELECTRICAL CHARACTERISTICS (Tamb=25℃
IC _Parameter
Symbol
unless otherwise specified)
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
N _{Collector-emitter breakdown voltage}
O _{Emitter-base breakdown voltage}
R _{Collector cut-off current}
Emitter cut-off current
CT _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter saturation voltage}
E _{Transition frequency}
Collector output capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Ic=-1mA, IE=0
Ic=-10mA, IB=0
IE=-1mA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1.5A
IC=-1A, IB=-50mA
IC=-1A, IB=-50mA
VCE=-2V, IC=-500mA
VCB=-10V, IE=0, f=1MHz
-50
V
-50
V
-5
V
-0.1 µA
-0.1 µA
70
240
40
-0.5 V
-1.2 V
120
MHz
40
pF
J _{Turn on Time}
ton
0.1
E_{Switching Time}
Storage Time
tstg
VCC=30V, IC=1A, IB1=-IB2=-0.05A
1.0
µs
W ^{Fall Time}
tf
0.1
CLASSIFICATION OF h_FE(1)
Rank
O
Y
Range
70-140
120-240
Marking
WO
WY
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]