KTA1663 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)

RoHS
KTA1663
WEJ ^{ELECTRONIC CO.,LTD KTA1663 TRANSISTOR(PNP)}
FEATURES
Power dissipation
P_CM:
0.5 W (Tamb=25℃)
Collector current
I_CM:
-1.5 A
Collector-base voltage
V_(BR)CBO: -35
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
1
2
3
SOT-89
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-Emitter saturation votage
Transition frequency
Coolletor Output Capacitance
Symbol Test conditions
MIN MAX UNIT
V(BR)CBO
Ic=-1mA, IE=0
-35
V
V(BR)CEO
IC= -10mA , IB=0
-30
V
V(BR)EBO
IE=-1mA, IC=0
-5
V
ICBO
VCB=-30V, IE=0
-0.1
µA
IEBO
VEB=-5V, IC=0
-0.1
µA
HFE
VCE=-2V, IC= -500mA 100 320
VCE(sat) IC=-1.5A, IB= -30mA
-2.0
V
VBE
VCE=-2V, IC=500mA
-1.0
fT
VCE= -5V, IC=- 50mA
80
MHz
Cob
VCB=-10V, IE=0,f=1MHZ
50
pF
CLASSIFICATION OF hFE
Rank
O
Y
Range
100-200
160-320
Marking
HO
HY
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