KTA1276 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

RoHS
KTA1276
KTA1276 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
2 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-3 A
Collector-base voltage
O _V(BR)CBO:
-30 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
E _{Transition frequency}
J _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-1mA, IE=0
Ic=-10mA, IB=0
IE=-1mA, IC=0
VCB=-20V, IE=0
VEB=-5V, IC=0
VCE=-2V, IC=-500mA
VCE=-2V, IC=-2.5A
IC=-2A, IB=-200mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-500mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-30
V
-30
V
-5
V
-1
µA
-1
µA
70
240
25
-0.8 V
-1
V
100
MHz
40
pF
E_{CLASSIFICATION OF hFE(1)}
W^Rank
O
Y
Range
70-140
120-240
Marking
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