KTA1275 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

RoHS
KTA1275
KTA1275 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
1 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-1 A
Collector-base voltage
O _V(BR)CBO:
-160 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
Transition frequency
E _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-1mA, IE=0
Ic=-10mA, IB=0
IE=-1mA, IC=0
VCB=-150V, IE=0
VEB=-6V, IC=0
VCE=-5V, IC=-200mA
IC=-500mA, IB=-50mA
VCE=-5V, IC=-5mA
VCE=-5V, IC=-200mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-160
V
-160
V
-6
V
-1
µA
-1
µA
60
320
-1.5 V
-0.45
-0.75 V
15
MHz
35
pF
J _{CLASSIFICATION OF hFE(1)}
E_Rank
W^Range
R
60-120
O
100-200
Y
160-320
Marking
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