KTA1274 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

RoHS
KTA1274
KTA1274 TRANSISTOR (PNP)
D _FEATURES
T _{Power dissipation}
.,L ^PCM:
1 W (Tamb=25℃)
Collector current
I_CM:
-400 mA
Collector-base voltage
O _{V(BR)CBO: -80}
V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C Emitter cut-off current
E _{DC current gain}
L _{Collector-emitter saturation voltage}
E _{Base-emitter voltage}
J _{Transition frequency}
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
C_ob
Test conditions
MIN
Ic=-1mA, IE=0
-80
IC= -5mA, IB=0
-80
IE= -1mA, IC=0
-5
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE= -2V, IC=-50mA
70
VCE= -2V, IC= -200mA
40
IC=-200mA, IB=-20mA
VCE= -2V, IC= -5mA
-0.55
VCE= -10V, IC= -10mA
VCB=-10V, IE=0, f=1MHZ
TYP
80
14
MAX
-0.1
-0.1
240
UNIT
V
V
V
µA
µA
-0.4
V
-0.8
V
MHz
pF
WE^{CLASSIFICATION OF hFE(1)}
Rank
O
Y
Range
70-140
120-240
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