KTA1273 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)

RoHS
KTA1273
KTA1273 TRANSISTOR (PNP)
D _FEATURES
T _{Power dissipation}
.,L ^PCM:
1 W (Tamb=25℃)
Collector current
I_CM:
-2 A
Collector-base voltage
O _V(BR)CBO:
-30 V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C Emitter cut-off current
DC current gain
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
E _{Transition frequency}
J _{Collector output capacitance}
Symbol
Test conditions
MIN
V(BR)CBO
Ic=-1mA, IE=0
-30
V(BR)CEO
IC= -10mA, IB=0
-30
V(BR)EBO
IE= -1mA, IC=0
-5
ICBO
VCB=-30V, IE=0
IEBO
VEB=-5V, IC=0
hFE
VCE= -2V, IC=-500mA
100
VCE(sat)
IC=-1.5A, IB=-30mA
VBE
VCE= -2V, IC= -500mA
fT
VCE= -2V, IC= -500mA
C_ob
VCB=-10V, IE=0, f=1MHZ
TYP
80
48
MAX
-0.1
-0.1
320
-2.0
-1.0
UNIT
V
V
V
µA
µA
V
V
MHz
pF
E_{CLASSIFICATION OF hFE(1)}
W ^Rank
O
Y
Range
100-200
160-320
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