KTA1266 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

RoHS
KTA1266
KTA1266 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
0.625 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-0.15 A
Collector-base voltage
O _V(BR)CBO:
-50 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter saturation voltage}
E _{Transition frequency}
J _{Collector output capacitance}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=-100µA, IE=0
Ic=-1mA, IB=0
IE=-100µA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-2mA
VCE=-6V, IC=-150mA
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-10V, IC=-1mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-50
V
-50
V
-5
V
-0.1 µA
-0.1 µA
70
400
25
-0.3 V
-1.1 V
80
MHz
7
pF
E_{Noise figure}
NF
VCE=-6V, Ic=-0.1mA,
f=1KHZ, Rg=10KΩ
W_{CLASSIFICATION OF hFE(1)}
10
dB
Rank
O
Y
GR
Range
70-140
120-240
200-400
Marking
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