FS1A Datasheet, PDF (1/2 Pages) Jinan Gude Electronic Device – 1.0 AMPS. FAST RECOVERY SILICON RECTIFIER

RoHS
FS1A-FS1M
Features _{1 Amp Fast RecoveTry}^D _{• For Surface Mount Applications}
• Extremely Low Thermal Resistance
5S0ilitcoo1n0R00e_.^{cV,tioLfier • Easy Pick And Place}
lts ^{• High Temp Soldering: 250°C for 10 Seconds At Terminals}
• Superfast Recovery Times For High Efficiency
Maximum Ratings _DO^O_{-214AC • Operating Temperature: -50°C to +150°C}
(SMAJ) (High Profile) _{• Storage Temperature: -50°C to +150°C}
C _{• Maximum Thermal Resistance; 15 °C/W Junction To Lead}
MCC
Catalog
IC Number
FS1A
N _FS1B
FS1D
FS1G
O _FS1J
FS1K
FS1M
Device
Marking
FS1A
FS1B
FS1D
FS1G
FS1J
FS1K
FS1M
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
TR _{Electrical Characteristics @ 25°C Unless Otherwise Specified}
Average Forward
current
I_F(AV)
1.0A T_J = 90°C
C _{Peak Forward Surge IFSM}
Current
30A 8.3ms, half sine
E _Maximum
Instantaneous
Forward Voltage
I_FM = 1.0A;
V_F
1.30V T_J = 25°C*
L _{Maximum DC}
Reverse Current At
E _{Rated DC Blocking}
Voltage
I_R
5µA T_J = 25°C
200µA T_J = 125°C
Maximum Reverse
J_{Recovery Time}
FS1A-G
T_rr
E _FS1J
FS1K-M
150ns
250ns
500ns
I_F=0.5A, I_R=1.0A,
I_rr=0.25A
Typical Junction
W^Capacitance
C_J
50pF Measured at
1.0MHz, V_R=4.0V
H
Cathode Band
J
A
C
E
D
F
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.078
.116
B
.067
.089
C
.002
.008
D
---
.02
E
.035
.055
F
.065
.096
G
.205
.224
H
.160
.180
J
.100
.112
MM
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
B
MAX
2.95
2.25
.20
.51
1.40
2.45
5.69
4.57
2.84
NOTE
SUGGESTED SOLDER
PAD LAYOUT
0.090”
0.085”
0.070”
*Pulse test: Pulse width 200 µsec, Duty cycle 2%
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]