FM120-M Datasheet, PDF (1/2 Pages) Formosa MS – Silicon epitaxial planer type

Chip Schottky Barrier Diodes
RoHS
FM120-M-1100-M
Features _{Plastic package has Underwriters Laboratory}
Flammability Classification 94V-O Utilizing Flame
D _{Retardant EpoxyMolding Compound.}
T _{For surface mounted applications.}
.,L ^{Exceeds environmental standards of MIL-S-19500 /}
228
CO ^{Low leakage current.}
SOD-123
0.161(4.1)
0.146(3.7)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.126(3.2)
0.110(2.8)
0.035(0.9) Typ.
0.063(1.6)
0.055(1.4)
0.035(0.9) Typ.
Dimensions in inches and (millimeters)
Mechanical data _{IC Case : Molded plastic, JEDEC SOD-123 / MINISMA}
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
N _{Polarity : Indicated by cathode band}
Mounting Position : Any
O _{Weight : 0.04 gram}
R _{MAXIMUM RATINGS (AT TA=25}o_{C unless otherwise noted)}
PARAMETER
CONDITIONS
Symbol MIN.
T _{Forward rectified current}
See Fig.1
IO
Forward surge current
8.3ms single half sine-wave superimposed on
IFSM
rate load (JEDEC methode)
C _{Reverse current}
E _{Thermal resistance}
L _{Diode junction capacitance}
Storage temperature
VR = VRRM TA = 25^oC
VR = VRRM TA = 125^oC
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
IR
RqJA
CJ
TSTG
-55
TYP.
98
120
MAX.
1.0
UNIT
A
30
A
0.5
10
+150
mA
mA
o_{C / w}
pF
o_C
J ^E _SYMBOLS
E_FM120-M
FM130-M
W^FM140-M
MARKING
CODE
12
13
14
V_RRM ^*1 V_RMS ^*2
(V)
(V)
20
14
30
21
40
28
V_R ^*3
(V)
20
30
40
V_F ^*4
(V)
0.50
Operating
temperature
(^o C)
-55 to +125
FM150-M
15
FM160-M
16
FM180-M
18
FM1100-M
10
50
35
50
0.70
60
42
60
-55 to +150
80
56
80
0.85
100
70
100
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
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