ES2A Datasheet, PDF (1/3 Pages) Jinan Gude Electronic Device – 2.0AMP. SUPER FAST RECOVRY SILICON RECTIFIERS

RoHS
ES2A thru ES2M
Features ^{2 Amp Super FastTD} _{• For Surface Mount Applications}
S5i0licRtooenc1o0Rv0ee0cr_.tyi^,fi^{L • Extremely Low Thermal Resistance}
er • Easy Pick And Place
• High Temp Soldering: 250 °C for 10 Seconds At Terminals
Volts _{• Superfast Recovery Times For High Efficiency}
Maximum Ratings _DO-2^O_{14AC • Operating Temperature: -50°C to +150°C}
(HSM^{C • Storage Temperature: -50°C to +150°C}
A) (High Profile) _{• Maximum Thermal Resistance; 20°C/W Junction To Lead}
MCC
IC ^Catalog
Number
ES2A
N _ES2B
ES2C
ES2D
Device
Marking
ES2A
ES2B
ES2C
ES2D
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
150V
200V
Maximum
RMS
Voltage
35V
70V
105V
140V
Maximum
DC
Blocking
Voltage
50V
100V
150V
200V
O _ES2G
ES2J
R _ES2K
ES2M
ES2G
ES2J
ES2K
ES2M
400V
600V
800V
1000V
280V
420V
560V
700V
400V
600V
800V
1000V
T _{Electrical Characteristics @ 25°C Unless Otherwise Specified}
Average Forward
C _Current
Peak Forward Surge
Current
E _Maximum
Instantaneous
L Forward Voltage
ES2A-D
ES2A-J
E_ES2K-M
Maximum DC
Reverse Current At
J _{Rated DC Blocking}
Voltage
I_F(AV)
I_FSM
V_F
I_R
2.0A
50A
T_J = 75°C
8.3ms, half sine
.975V
1.35V
1.70V
I_FM = 2.0A;
T_J = 25°C*
5µA T_J = 25°C
150µA T_J = 100°C
Maximum Reverse
E_{Recovery Time}
ES2A-D
ES2G-J
T_rr
W ^ES2K-M
50ns
60ns
100ns
I_F=0.5A, ^CI^a_R^t=1.0A,
I_rr=0.25A
H
Cathode Band
J
A
C
E
D
F
G
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.078
.116
B
.067
.089
C
.002
.008
D
---
.02
E
.035
.055
F
.065
.096
G
.205
.224
H
.160
.180
J
.100
.112
MM
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
B
MAX
2.95
2.25
.20
.51
1.40
2.45
5.69
4.57
2.84
NOTE
SUGGESTED SOLDER
PAD LAYOUT
0.090”
0.085”
Typical Junction
C_J
25pF Measured at
0.070”
Capacitance
1.0MHz, V_R=4.0V
*Pulse test: Pulse width 200 µsec, Duty cycle 2%
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