DAP222_15 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – SWITCHING DIODE

RoHS
DAP222
WEJ ^{ELECTRONIC CO.,LTD DAP222 SWITCHINGDIODE}
FEATURES:
Power dissipation
P_D:
150 mW (Tamb=25℃)
Collector current
I_F:
100 mA
Collector-base voltage
V_R:
80 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
CIRCUIT:
1.60
1.00
0.20
1.60
0.30
0.50
0.81
SOT-523
1
3
2
MARKING: P
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR)
IR
Test conditions
IR= 100µA
VR=70V
MIN
MAX
80
0.1
Forward voltage
VF
IF=100mA
1.2
Diode capacitance
CD
VR=6V, f=1MHz
3.5
UNIT
V
µA
V
pF
Reverse recovery time
trr
VR=6V, IF=5mA
4
ns
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]