D965 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

RoHS
D965
D965 TRANSISTOR (NPN)
TO-92
TD _FEATURES
.,L ^{Power dissipation}
P_CM:
0.75 W (Tamb=25℃)
O _{Collector current}
I_CM:
5A
C _{Collector-base voltage}
V_(BR)CBO:
42 V
Operating and storage junction temperature range
IC _{TJ, Tstg: -55℃ to +150℃}
1. EMITTER
2. COLLECTOR
3. BASE
123
N _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
O _Parameter
Collector-base breakdown voltage
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
C _{Collector cut-off current}
E _{Emitter cut-off current}
EL _{DC current gain}
J _{Collector-emitter saturation voltage}
Symbol
Test conditions
MIN
V(BR)CBO
Ic=1mA, IE=0
42
V(BR)CEO
Ic= 1mA, IB=0
22
V(BR)EBO
IE= 10µA, IC=0
6
ICBO
VCB= 30V, IE=0
IEBO
VEB= 6V, IC=0
hFE(1)
VCE= 2V, IC= 0.15 mA
150
hFE(2)
VCE= 2V, IC = 500 mA
340
hFE(3)
VCE=2V, IC = 2000 mA 150
VCE(sat) IC=3000mA, IB=100 mA
TYP
MAX
0.1
0.1
950
0.35
UNIT
V
V
V
µA
µA
V
WECLASSIFICATION OF h_FE(2)
Rank
R
T
Range
340-600
560-950
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]