D882 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TO-126 Plastic-Encapsulate Transistors

RoHS
D882
D882 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
500 mW (Tamb=25℃)
.,L ^{Collector current}
I_CM:
3A
Collector-base voltage
O _V(BR)CBO:
40 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
Symbol
Test conditions
MIN
N _{Collector-base breakdown voltage}
V(BR)CBO
Ic= 100µA, IE=0
40
O _{Collector-emitter breakdown voltage}
V(BR)CEO
Ic= 10 mA, IB=0
30
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
6
R _{Collector cut-off current}
ICBO
VCB= 40 V, IE=0
T _{Collector cut-off current}
ICEO
VCE= 30 V, IB=0
C _{Emitter cut-off current}
IEBO
VEB= 6 V, IC=0
LE ^{DC current gain}
hFE(1)
hFE(2)
VCE= 2 V, IC= 1A
60
VCE= 2 V, IC= 100mA
32
E _{Collector-emitter saturation voltage}
VCE (sat)
IC= 2A, IB= 0.2 A
Base-emitter saturation voltage
EJ ^{Transition frequency}
VBE (sat)
IC= 2A, IB= 0.2 A
VCE= 5V, Ic=0.1A
fT
50
f =10MHz
TYP
MAX
1
10
1
400
UNIT
V
V
V
µA
µA
µA
0.5
V
1.5
V
MHz
W^{CLASSIFICATION OF hFE (1)}
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]