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| CZT5401 Datasheet, PDF (1/1 Pages) Central Semiconductor Corp – PNP SILICON TRANSISTOR | |||
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RoHS
CZT5401
CZT5401 TRANSISTOR (PNP)
SOT-223
FEATURES
D Power dissipation
T PCM: 1 W (Tamb=25â)
Collector current
.,L ICM: -0.6 A
Collector-base voltage
V(BR)CBO: -160
V
O Operating and storage junction temperature range
C TJ,Tstg: -55â to +150â
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
IC Parameter
Collector-base breakdown voltage
N Collector-emitter breakdown voltage
O Emitter-base breakdown voltage
Collector cut-off current
R Emitter cut-off current
CT DC current gain
LE Collector-emitter saturation voltage
E Base-emitter voltage
J Transition frequency
ECollector output capacitance
WNoise figure
Symbol Test conditions
V(BR)CBO Ic=-100µ A,IE=0
V(BR)CEO Ic=-1mA,IB=0
V(BR)EBO IE=-10 µ A,IC=0
ICBO
VCB=-100V,IE=0
IEBO
VEB=-3V,IC=0
hFE(1) VCE=-5V,IC=-1mA
hFE(2) VCE=-5V,IC=-10mA
hFE(3) VCE=-5V,IC=-50mA
VCE(sat) IC=-10mA,IB=-1mA
VCE(sat) IC=-50mA,IB=-5mA
VBE(sat) IC=-10mA,IB=-1mA
VBE(sat) IC=-50mA,IB=-5mA
fT
VCE=-10V,IC=-10mA,f=100MHz
Cob
VCB=-10V,IE=0,f=1MHz
VCE=-5V,Ic=-0.2mA,
NF
MIN TYP MAX UNIT
-160
V
-150
V
-5
V
-50
nA
-50
nA
50
60
240
50
-0.2
V
-0.5
V
-1
V
-1
V
100
300 MHz
6
pF
8
dB
f=10Hzto15.7KHZ,Rs=10â¦
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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