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| C945 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors | |||
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RoHS
C945
C945 TRANSISTOR (NPN)
FEATURES
TO-92
Power dissipation
PCM:
Collector current
0.4 W (Tamb=25â)
ICM:
0.15 A
Collector-base voltage
V (BR) CBO:
60 V
Operating and storage junction temperature range
1. EMITTER
2. COLLECTOR
3. BASE
123
TJ, Tstg: -55â to +150â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage V(BR)CBO
Ic=1mA, IE=0
60
V
Collector-emitter
voltage
breakdown V(BR)CEO
IC=100uA , IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=60V, IE=0
0.1
µA
Collector cut-off current
ICEO
VCE=45V
0.1
µA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
µA
DC current gain
hFE(1)
VCE=6V, IC=1mA
70
700
hFE(2)
VCE=6V, IC=0.1mA
40
Collector-emitter saturation voltage VCE(sat)
IC=100mA, IB=10mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB=10mA
1
V
Transition frequency
fT
VCE=6V, IC=10mA, f =30 MHz 200
MHz
Collector output capacitance
Noise figure
Cob
VCB=10V, IE=0, f=1MHZ
NF
VCE=6V, IC=0.1mA
Rg=10kâ¦, f=1kMHZ
3.0
pF
4
10
dB
CLASSIFICATION OF hFE(1)
Rank
O
Range
70-140
Y
120-240
GP
200-400
BL
350-700
WEJ ELECTRONIC CO.,LTDHttp:// www.wej.cn E-mail:wej@yongerjia.com
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