C2714 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – NPN EPITAXIAL SILICON TRANSISTOR

RoHS
2SC2714
NPN EPITAXIAL SILICON TRANSISTOR
WEJ ELECTRONIC CO.,LTD AM/FMIFAMPLIFIER,LOCALOSCILIATOR
OF FM/VHF TUNER
* High Current Gain Bandwidth Product f_T=1100MHz
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
Collector-Base Voltage
Vcbo
40
Collector-Emitter Voltage
Vceo
30
Emitter-Base Voltage
Vebo
4.0
Collector Current
Ic
20
Collector Dissipation Ta=25 *
P_D
100
Junction Temperature
Tj
150
Storage Temperature
Tstg -55-150
Unit
V
V
V
mA
mW
1.
2.4
1.3
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage Bvcbo 40
V Ic=100uA Ie=0
Collector-Emitter
Breakdown Bvceo 30
V Ic= 1mA Ib=0
Voltage#
Emitter-Base Breakdown Voltage
Bvebo 4.0
V Ie= 100uA Ic=0
Collector-Base Cutoff Current
Icbo
500 nA Vcb= 18V Ie=0
Emitter-Base Cutoff Current
Iebo
500 nA Veb= 4V Ic= 0
DC Current Gain
Hfe
40
200
Vce= 6V Ic= 1mA
Collector-Emitter Saturation Voltage Vce(sat)
0.40 V Ic= 10mA Ib= 1mA
Collector-Base Capacitance
Cob
1.3 1.7 PF Vcb=10V Ie=0 f=1MHZ
Current Gain-Bandwidth Product
f_T
550
MHz Vce= 6V Ic= 1mA
* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
# Pulse Test : Pulse Width 300uS,Duty cycle 2%
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