C2611 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TO-251 Plastic-Encapsulate Transistors

RoHS
C2611
C 2611 _FEATURES
D _{Power dissipation}
TRANSISTOR (NPN)
T _PCM:
1
W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
0.2 A
Collector-base voltage
V_(BR)CBO: 600 V
O _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
TO-251
1. EMITTER
2. COLLECTOR
3. BASE
123
C _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
IC ^Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
Collector-base breakdown voltage
N _{Collector-emitter breakdown voltage}
O _{Emitter-base breakdown voltage}
Collector cut-off current
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
LE _{Collector-emitter saturation voltage}
E _{Base-emitter saturation voltage}
V(BR)CBO
Ic= 100µA, IE=0
600
V(BR)CEO
IC= 1mA , IB=0
400
V(BR)EBO
IE= 100µA, IC=0
7
ICBO
VCB= 600V, IE=0
ICEO
VCE= 400V, IB=0
IEBO
VEB= 7V, IC=0
hFE(1)
VCE= 20V, IC= 20mA
10
hFE(2)
VCE= 10V, IC= 0.25 mA
5
VCE(sat)
IC= 50mA, IB= 10 mA
VBE(sat)
IC= 50 mA, IB= 10mA
V
V
V
100
µA
200
µA
100
µA
40
0.5
V
1.2
V
J _{Transition frequency}
fT
VCE= 20 V, IC=20mA
8
f = 1MHz
MHz
E_{Fall time}
W_{Storage time}
tf
IC=50mA,
IB1=-IB2=5mA,
tS
VCC=45V
0.3
µs
1.5
µs
CLASSIFICATION OF h_FE(1)
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40
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