C1815 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TRANSISTOR NPN

RoHS
C1815
C1815 TRANSISTOR (NPN)
D _FEATURES
T _{Power dissipation}
.,L P_CM:
0.4 W (Tamb=25℃)
Collector current
O _ICM:
0.15 A
Collector-base voltage
C _V(BR)CBO:
60 V
Operating and storage junction temperature range
IC ^{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
N _Parameter
O _{Collector-base breakdown voltage}
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
Collector cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= 100µA, IE=0
Ic= 0. 1 mA, IB=0
IE= 100µA, IC=0
VCB= 60V, IE=0
MIN
TYP
60
50
5
C _{Collector cut-off current}
E _{Emitter cut-off current}
L _{DC current gain}
E _{Collector-emitter saturation voltage}
J _{Base-emitter saturation voltage}
ICEO
VCE= 50V, IB=0
IEBO
VEB= 5V, IC=0
hFE(1)
VCE= 6V, IC= 2mA
70
VCE(sat) IC= 100mA, IB= 10 mA
VBE(sat) IC= 100 mA, IB= 10mA
MAX
0.1
0.1
0.1
700
0.25
1
UNIT
V
V
V
µA
µA
µA
V
V
E_{Transition frequency}
W_{CLASSIFICATION OF hFE(1)}
fT
VCE= 10 V, IC= 1mA
f=30MHz
80
MHz
Rank
O
Y
GR
BL
Range
70-140
120-240
200-400
350-700
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