BZT52C2V4S-39S Datasheet, PDF (1/3 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – ZENER DIODE

RoHS
BZT52C2V4S-39S
BZT52C2V4S-BZT52C39S ZENER DIODE
FEATURES：
z Planar die construction
z 200mW power dissipation on ceramic PBC
z General purpose, Medium current
z Ideally suited for automated assembly processes
z Available in Lead free version
Maximum Ratings @Ta=25℃ unless otherwise specified
Characteristic
Symbol
Value
Forward Voltage (Note 2) @ I_F = 10mA
V_F
0.9
Power Dissipation(Note 1)
P_D
200
Thermal Resistance, Junction to Ambient Air
R_θJA
625
Operating and Storage Temperature Range
T_j,T_STG
-65 to +150
Notes:1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm².
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
Unit
V
mW
℃/W
℃
WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:[e-mail]