BF620 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN high-voltage transistors

RoHS
BF620
WEJ ^{ELECTRONIC CO.,LTD BF620 TRANSISTOR(NPN)}
FEATURES
Power dissipation
P_CM:
500 mW (Tamb=25℃)
Collector current
I_CM:
Collector-base voltage
50 mA
V_(BR)CBO:
300 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=200V, IE=0
VEB=5V, IC=0
VCE=20V, IC=25mA
IC=30mA, IB=5mA
VCE=10V, IC=100mA, f=100MHz
MIN TYP MAX UNIT
300
V
300
V
5
V
10 nA
50 nA
50
0.6 V
60
MHz
Marking
DC
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