BF421 Datasheet, PDF (1/1 Pages) Motorola, Inc – High Voltage Transistors(PNP)

RoHS
BF421/BF423
BF421 TRANSISTOR (PNP)
BF423 _{D FEATURES}
Power dissipation
T _PCM:
Collector current
0.83 W (Tamb=25℃)
.,L ^ICM:
-100 mA
Collector-base voltage
V_(BR)CBO:
BF421 -300 V
BF423 -250 V
O _{Operating and storage junction temperature range}
C _{TJ, Tstg: -55 to +150}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N Collector-base breakdown voltage BF421
BF423
O Collector-emitter breakdown voltage BF421
BF423
R _{Emitter-base breakdown voltage}
Symbol
VCBO
VCEO
VEBO
Test conditions
Ic=-100µA , IE=0
IC= -1mA , IB=0
IE=-100µA, IC=0
MIN
-300
-250
-300
-250
-5
TYP
MAX UNIT
V
V
V
T _{Collector cut-off current}
ICBO
VCB=-200V, IE=0
-0.01 µA
Emitter cut-off current
IEBO
VEB=-5V, IC=0
-0.05 µA
C _{DC current gain}
E _{Collector-emitter saturation voltage}
WEJ ^{EL Transition frequency}
hFE
VCE=-20V, IC=-25mA
50
VCE(sat)
IC=-30 mA, IB=- 5mA
fT
VCE=-10V, IC= -10mA
60
-0.6
V
MHz
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]