BF420 Datasheet, PDF (1/1 Pages) Motorola, Inc – High Voltage Transistors(NPN)

RoHS
BF420/BF422
BF420 TRANSISTOR (NPN)
BF422 _{D FEATURES}
Power dissipation
T _PCM:
.,L ^{Collector current}
0.83 W (Tamb=25℃)
I_CM:
0.1 A
Collector-base voltage
O ^V(BR)CBO:
BF420 300 V
BF422 250 V
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
C Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
C _{Emitter cut-off current}
BF420
BF422
BF420
BF422
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
Test conditions
Ic=100µA , IE=0
IC= 1mA , IB=0
IE=100µA, IC=0
VCB=200V, IE=0
VEB=5V, IC=0
MIN MAX UNIT
300
V
250
300
V
250
5
V
0.01 µA
0.05 µA
E _{DC current gain}
hFE(1)
VCE=20V, IC=25mA
50
L _{Collector-emitter saturation voltage}
WEJ ^{E Transition frequency}
VCE(sat)
IC=30 mA, IB= 5mA
0.6
V
VCE=10V, IC= 10mA
fT
60
f = 100MHz
MHz
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