BF370 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN medium frequency transistor

RoHS
BF370
BF370 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
0.5 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
0.1 A
Collector-base voltage
O _{V(BR)CBO: 40 V}
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. COLLECTOR
2. BASE
3. EMITTER
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
Symbol
Test conditions
MIN
TYP
N _{Collector-base breakdown voltage}
V(BR)CBO
Ic= 100µA, IE=0
40
O _{Collector-emitter breakdown voltage}
V(BR)CEO
Ic= 1 mA, IB=0
15
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
4.5
R _{Collector cut-off current}
ICBO
VCB= 20V, IE=0
T _{Emitter cut-off current}
IEBO
VEB= 2V, IC=0
C _{DC current gain}
hFE
VCE= 1V, IC= 10mA
40
E _{Collector-emitter saturation voltage}
VCE(sat)
IC=15mA, IB=1.5 mA
L _{Base-emitter saturation voltage}
VBE(sat)
IC=15mA, IB=1.5 mA
MAX
0.4
0.1
200
0.2
1.2
UNIT
V
V
V
µA
µA
V
V
WEJ ^{E Transition frequency}
fT
VCE= 10V, IC=10mA
500
f =100MHz
MHz
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