BD233 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – Medium Power Linear and Switching Applications

RoHS
BD233/235/237
WEJ ELECTRONIC CO.,LTD BD233/235/237 TRANSISTOR (NPN)
FEATURES
TO-126
Power dissipation
1. EMITTER
P_CM:
1.25 W (Tamb=25℃)
2. COLLECTOR
Collector current
I_CM:
Collector-base voltage
2A
V_(BR)CBO:
BD233 : 45 V
BD235: 60 V
BD237: 100 V
Operating and storage junction temperature range
T_{J :} 150℃
T_stg: -65℃ to +150℃
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN
MAX
Collector-base breakdown voltage
BD233
45
BD235
V(BR)CBO
Ic= 100µA, IE=0
60
BD237
100
Collector-emitter breakdown voltage BD233
45
BD235
V(BR)CEO
Ic= 10mA, IB=0
60
BD237
80
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
5
Collector cut-off current
BD233
VCB= 45V, IE=0
BD235
ICBO
VCB= 60V, IE=0
100
BD237
VCB= 100V, IE=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
1
DC current gain
HFE(1)
VCE= 2V, IC=150mA
40
HFE(2)
VCE=2V, IC= 1A
25
UNIT
V
V
V
µA
mA
Collector-emitter saturation voltage
VCE(sat)
IC=1A, IB= 100m A
0.6
V
Transition frequency
VCE=10V, Ic=250mA
fT
3
f =10MHz
MHz
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