BD136 Datasheet, PDF (1/1 Pages) Motorola, Inc – Plastic Medium Power Silicon PNP Transistor

RoHS
BD136/138/140
BD136/BD138/BD140 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
1.25 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-1.5 A
Operating and storage junction temperature range
O _{TJ, Tstg: -55℃ to +150℃}
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
123
C _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
Symbol
Test conditions
IC_BD136
N ^{Collector-base breakdown voltage}
V(BR)CBO
Ic=-100µA, IE=0
BD138
BD140
O _BD136
R Collector-emitter breakdown voltage V(BR)CEO
Ic=-30mA, IB=0
BD138
BD140
T _{Emitter-base breakdown voltage}
C _{Collector cut-off current}
E _{Emitter cut-off current}
EL _{DC current gain}
EJ _{Collector-emitter saturation voltage}
W^{Base-emitter voltage}
V(BR)EBO
IE=-100µA, IC=0
ICBO
VCB=-30V, IE=0
IEBO
VEB=-5V, IC=0
hFE(1)
VCE=-2V, IC=-5Ma
hFE(2) V_CE=-2V, I_C=-150mA
BD136
BD138
BD140
hFE(3)
VCE=-2V, IC=-500mA
VCE(sat)
IC=-500mA, IB=-50mA
VBE
VCE=-2V, IC=-500mA
MIN TYP MAX UNIT
-45
-60
V
-80
-45
-60
V
-80
-5
V
-0.1 µA
-10 µA
25
40
250
40
160
25
-0.5 V
-1
V
CLASSIFICATION OF h_FE(2)
Rank
6
10
16
Range
40-100
63-160
100-250
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