BD135 Datasheet, PDF (1/1 Pages) Motorola, Inc – Plastic Medium Power Silicon NPN Transistor

RoHS
BD135/137/139
BD135/BD137/BD139 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
1.25 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
1.5 A
Operating and storage junction temperature range
O _{TJ, Tstg: -55℃ to +150℃}
TO-126
1. EMITTER
2. COLLECTOR
3. BASE
123
C _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
Symbol
Test conditions
MIN
IC_BD135
45
Collector-base breakdown voltage
V(BR)CBO
Ic=100µA, IE=0
BD137
60
N _BD139
80
O _BD135
45
R Collector-emitter breakdown voltage V(BR)CEO
Ic=30mA, IB=0
BD137
60
BD139
80
T _{Emitter-base breakdown voltage}
V(BR)EBO
IE=100µA, IC=0
5
C _{Collector cut-off current}
ICBO
VCB=30V, IE=0
E _{Emitter cut-off current}
EL _{DC current gain}
IEBO
VEB=5V, IC=0
hFE(1)
VCE=2V, IC=5mA
25
BD135
40
hFE(2) V_CE=2V, I_C=150mA
BD137/BD139 40
hFE(3)
VCE=2V, IC=500mA
25
J _{Collector-emitter saturation voltage}
VCE(sat)
IC=500mA, IB=50mA
WE^{Base-emitter voltage}
VBE
VCE=2V, IC=500mA
TYP
MAX UNIT
V
V
V
0.1 µA
10 µA
250
160
0.5 V
1
V
CLASSIFICATION OF h_FE(2)
Rank
6
10
16
Range
40-100
63-160
100-250
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