BCX56_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

RoHS
BCX56
BCX56 TRANSISTOR (NPN)
D _FEATURES
T _{Power dissipation}
P_CM:
0.5
.,L ^{Collector current}
I_CM:
1
Collector-base voltage
V_(BR)CBO: 100
W (Tamb=25℃)
A
V
O _{Operating and storage junction temperature range}
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
Emitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic=100µA, IE=0
IC= 10mA , IB=0
IE=10µA, IC=0
VCB=30V, IE=0
VEB=5V, IC=0
MIN MAX UNIT
100
V
80
V
5
V
0.1
µA
0.1
µA
LEC ^{DC current gain}
BCX56
BCX56-10
BCX56-16
E _{Collector-emitter saturation voltage}
J _{Base-emitter voltage}
WE^{Transition frequency}
hFE(1)
VCE=2V, IC= 150mA
63
250
63
160
100 250
hFE(2)
VCE=2V, IC= 5mA
40
hFE(3)
VCE=2V, IC= 500mA
25
VCE(sat) IC=500 mA, IB= 50mA
0.5
V
VBE(ON)
IC= 500 mA, VCE=2V
1
V
VCE= 5V, IC= 1mA
fT
130
f = 100MHz
MHz
DEVICE MARKING
BCX56=BH BCX56-10=BK BCX56-16=BL
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]