BCX52 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – Plastic-Encapsulate Transistors

RoHS
BCX52
BCX52 TRANSISTOR (PNP)
D _FEATURES
T _{Power dissipation}
P_CM:
0.5
.,L ^{Collector current}
I_CM:
-1
Collector-base voltage
V_(BR)CBO: -60
W (Tamb=25℃)
A
V
O _{Operating and storage junction temperature range}
C _{TJ, Tstg: -55℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
Emitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic=-100µA , IE=0
IC=-10mA , IB=0
IE=-10µA, IC=0
VCB=-30V, IE=0
VEB=-5V, IC=0
MIN MAX UNIT
-60
V
-60
V
-5
V
-0.1 µA
-0.1 µA
LEC ^{DC current gain}
BCX52
BCX52-10
BCX52-16
E _{Collector-emitter saturation voltage}
J _{Base-emitter voltage}
WE^{Transition frequency}
hFE(1)
63
250
VCE=-2V, IC=-150mA
63
160
100 250
hFE(2)
VCE=-2V, IC= -5mA
63
hFE(3)
VCE=-2V, IC=-500mA
40
VCE(sat) IC=-500 mA, IB=-50mA
-0.5
V
VBE(ON)
IC=- 500mA, VCE=-2V
-1
V
VCE= -5V, IC= -10mA
fT
50
f = 100MHz
MHz
DEVICE MARKING
BCX52=AE BCX52-10=AG BCX52-16=AM
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]