BCX20LT1 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – NPN EPITAXIAL SILICON TRANSISTOR

RoHS
BCX20LT1
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTORS
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
Unit
Collector-Base Voltage
Vcbo
30
V
Collector-Emitter Voltage
Vceo
25
V
Emitter-Base Voltage
Vebo
5.0
V
Collector Current
Ic
500
mA
Total Device Dissipation
FR-5 Board(1) Ta=25
P_D
225
mw
Derate above 25
1.8
mW/
WEJ ELECTRONIC TotalDeviceDissipation
Alumina Substrate,(2) Ta=25
Derate above 25
Junction Temperature
Storage Temperature
P_D
300
2.4
Tj
150
Tstg -55-150
mw
mW/
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ Max Unit
Collector-Base Voltage
V(BR)ceo 25
V
Collector-Emitter Voltage
V(BR)ces 30
V
Emitter Cutoff Current
Iebo
10 uA
Collector Cutoff Current
Icbo
100
DC Current Gain
H_FE
70
40
Collector-Emitter Saturation Voltage Vce(sat)
100 nA
5.0 uA
600
620 mV
Base-Emitter Saturation Voltage
Vbe(on)
1.2
V
* 1.Total Device Dissipation : FR=1X0.75X0.062in .
2.Alumina=0.4 X 0.3 X 0.024in.99.5% alumina
DEVICE MARKING:
BCX20LT1=U2
CO.,LTD 1.
2.4
1.3
1 . G AT E
2.SOURCER
3.DRAIE
Unit:mm
Test Conditions
Ic=10mA Ib=0
Ic=10uA Ic=0
Veb=5V Ic=0
Vcb=20V Ie=0
Vcb=20V Ie=0 T_A=150
Vce=1.0V Ic=-100mA
Vce=1.0V Ic=-300mA
Vce=1.0V Ic=-500mA
Ic=-500mA Ib=-50mA
Vbe=1V Ic=500mA
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