BCW68G Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – PNP General Purpose Amplifier

RoHS
BCW68G
PNP EPITAXIAL SILICON TRANSISTOR
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SIGNAL TRANSISTORS
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating
Collector-Emitter Voltage
Vceo
-45
Collector-Base Voltage
Vcbo
-60
Collector Current
Ic
-800
Collector Dissipation Ta=25 *
P_D
225
Junction Temperature
Tj
150
Storage Temperature
Tstg -65-150
Unit
V
V
mA
mW
1.
2.4
1.3
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Max Unit
Test Conditions
DC Current Gain
Hfe 120 400
Vce= -1.0V Ic= -10mA
Collector-Emitter Saturation Voltage
Vce(sat)
-1.5 V Ic= -300mA Ib= -30mA
Gain Bandwidth Product
f_T
100
MHz Vce= -5V Ic=-10mA
f=50MHz
* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
# Pulse Test: Pulse Width 300uS,Duty cycle 2%
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