BCW61BLT1_15 Datasheet, PDF (1/1 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – PNP TRANSISTOR

RoHS
BCW61B
SOT-23 Plastic-Encapsulate Transistors
BCW61B _{D FEATURES}
TRANSISTOR (PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
.,LT ^{Power dissipation}
P_CM:
0.25 W (Tamb=25℃)
Collector current
O _ICM:
-0.2 A
Collector-base voltage
C _V(BR)CBO:
-32 V
Operating and storage junction temperature range
IC ^{TJ, Tstg: -55℃ to +150℃}
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
N _Parameter
O _{Collector-base breakdown voltage}
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
Collector cut-off current
C _{Collector cut-off current}
E _{DC current gain}
L _{Collector-emitter saturation voltage}
E _{Base-emitter saturation voltage}
J _{Transition frequency}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Test conditions
Ic= -10µA, IE=0
Ic= -1mA, IB=0
IE=-10µA, IC=0
VCB=-32V, IE=0
VEB=-4V, IC=0
VCE=-5V, IC= -2mA
IC=-50mA, IB=-1.25mA
IC=-50mA, IB=-1.25mA
VCE= -5V, IC=-10mA
f=100MHz
MIN
-32
-32
-5
180
100
TYP
MAX UNIT
V
V
V
-0.02 µA
-0.02 µA
310
-0.55
V
-1.05
V
MHz
WE^Marking
BB
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]