BCW60C Datasheet, PDF (1/1 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR

RoHS
BCW60C
SOT-23 Plastic-Encapsulate Transistors
BCW60C _{D FEATURES}
TRANSISTOR (NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
T _{Power dissipation}
.,L ^PCM:
0.25 W (Tamb=25℃)
Collector current
I_CM:
0.1 A
O _{Collector-base voltage}
V_(BR)CBO:
32 V
C _{Operating and storage junction temperature range}
T_J, T_stg: -55℃ to +150℃
2. 4
1. 3
Unit: mm
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
Collector-base breakdown voltage
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
Collector cut-off current
LEC ^{DC current gain}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
hFE3
E _{Collector-emitter saturation voltage}
VCE(sat)
J _{Base-emitter saturation voltage}
WE^{Base-emitter voltage}
VBE(sat)
VBE
Test conditions
Ic= 10µA, IE=0
Ic= 1mA, IB=0
IE=10µA, IC=0
VCB=32V, IE=0
VEB=4V, IC=0
VCE=5V, IC= 10µA
VCE=5V, IC= 2mA
VCE=5V, IC= 50mA
IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA
IC=10mA, IB=0.25mA
IC=50mA, IB=1.25mA
VCE=5V, IC= 2mA
MIN
32
32
5
40
250
100
0.55
MAX
0.02
0.02
UNIT
V
V
V
µA
µA
460
0.35
V
0.55
V
0.85
V
1.05
V
0.75
V
Transition frequency
fT
VCE= 5V, IC=10mA, f=100MHz
100
MHz
Output capacitance
C_ob
VCB= 10V, IE=0, f=1MHz
5
pF
Marking
AC
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