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BCW31 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN general purpose transistors
RoHS
BCW31
FEATURES
WEJ ELECTRONIC CO.,LTD *Lowcurrent(100mA)
* Low voltage(32V)
* General purpose swithching and amplification
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Vcbo
32
V
Collector-Emitter Voltage
Vceo
32
V
Emitter-Base Voltage
Veb
5
V
Collector Current
Ic
100
mA
Collector Dissipation Ta=25 *
PD
250
mW
Junction Temperature
Tj
150
Storage Temperature
Tstg
-65-150
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Voltage BVcbo 32
Collector-Emitter
Breakdown BVceo 32
Voltage#
Emitter-Base Breakdown Voltage
BVebo 5
100
Collector Cutoff Current
Icbo
10
Emitter Cutoff Current
Iebo
100
Base-Emitter Voltage
Vbe 550
700
Collector Capacitance
Cob
2.5
DC Current Gain
190
Hfe
110
220
Collector-Emitter Saturation Voltage Vce(sat)
120 250
210
750
Base-Emitter Saturation Voltage
Vbe(sat)
850
Transition Frequency
fT
100
Noise figure
10
F
* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 .
# Pulse Test : Pulse Width 300uS,Duty cycle 2%
DEVICE MARKING:
1.
2.4
1.3
1 . G AT E
2 .SO U RC E R
3.DRAIE
U nit :m m
Unit
Test Conditions
V Ic=100uA Ie=0
V Ic= 2mA Ib=0
V Ie= 100uA Ic=0
nA Vcb= 32V Ie=0
uA Vcb=32V Ie=0 Tj=100
nA Veb=5V Ic=0
mV Ic=2mA Vce=5V
pF Ie=0 Vcb=10V f=1MHz
Vce= 5V Ic= 10uA
Vce= 5V Ic= 2mA
Ic= 10mA Ib= 0.5mA
mV
Ic=50mA Ib=2.5mA
Ic= 10mA Ib= 0.5mA
mV
Ic=50mA Ib=2.5mA
Vce=5V Ic=10mA
MHz
f=100MHz
Ic=200uA Vce=5V Rs=2k
dB
F=1kHz B=200Hz
BCW31=D1t
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