BCP869_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – Plastic Encapsulated Transistor

RoHS
BCP869
BC869 TRANSISTOR (PNP)
D _FEATURES
T _{Power dissipation}
P_CM:
500
.,L ^{Collector current}
I_CM:
-2
Collector-base voltage
V_(BR)CBO:
-32
mW (Tamb=25℃)
A
V
O _{Operating and storage junction temperature range}
C _{TJ, Tstg: -65℃ to +150℃}
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
Emitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic=-0.1mA, IE=0
IC= -1mA , IB=0
IE=-0.1mA, IC=0
VCB=-25V, IE=0
VEB=-5V, IC=0
MIN MAX UNIT
-32
V
-20
V
-5
V
-0.1 µA
-0.1 µA
EC _{DC current gain}
hFE(1)
VCE=-10V, IC= -5mA
50
VCE=-1V, IC= -500mA 100 375
VCE=-1V, IC= -1A
60
L_BC869-16
E _BC869-25
Collector-emitter saturation voltage
hFE(2)
100 250
VCE=-1V, IC= -500mA
160
375
VCE(sat)
IC=-1A, IB= -100mA
0.5
V
WEJ ^{Transition frequency}
fT
VCE=-5V, IC=-10mA
40
f = 100MHz
MHz
DEVICE MARKING
BC869=CEC BC869-16=CGC BC869-25=CHC
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]