BCP54 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN medium power transistors

RoHS
BCP54-56
BCP54,55,56 TRANSISTOR (NPN)
FEATURES
z For AF driver and output stages
z High collector current
z Low collector-emitter saturation voltage
z Complementary types: BCP51 ... BCP53 (PNP)
SOT-223
1
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature Range
BCP54
45
45
BCP55
60
60
5
1
1.5
94
-65to+150
BCP56
100
80
Units
V
V
V
A
W
℃ /W
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage BCP54
45
BCP55
V_(BR)CBO I_C= 0.1mA,I_E=0
60
BCP56
100
Collector-emitter breakdown voltage BCP54
45
BCP55 V(BR)CEO IC= 10mA,IB=0
60
BCP56
80
Base-emitter breakdown voltage
V_(BR)EBO I_C= 10μA,I_E=0
5
Collector cut-off current
I_CBO
V_CB= 30 V, I_E=0
h_FE(1)
V_CE= 2V, I_C=5mA
25
DC current gain
h_FE(2)
V_CE= 2V, I_C=150m A
63
h_FE(3)
V_CE= 2V, I_C=500m A
25
Collector-emitter saturation voltage
V_CE(sat) I_C=500mA,I_B=50mA
Base-emitter voltage
V_BE
V_CE=2V, I_C=500m A
Transition frequency
f_T
V_CE=10V,I_C=50mA,f=100MHz 100
MAX UNIT
V
V
V
100
nA
250
0.5
V
1
V
MHz
CLASSIFICATION OF h_FE(2)
Rank
BCP54-10, BCP55-10, BCP56-10
Range
63-160
BCP54-16, BCP55-16, BCP56-16
100-250
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