BC856 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistors

RoHS
BC856-BC858
PNP SILICON TRANSISTOR
WEJ ELECTRONIC CO.,LTD Features
Power dissipation
P_CM : 0.3 W (Tamb=25 C)
Pluse Drain
I_CM : -0.1 mA
Reverse Voltage
V_(BR)CBO : BC856 -80V
BC857 -50V
BC858 -30V
Operating and storage junction temperature range
T_j, T_stg : -55 C to +150 C
1
1.
2.4
1.3
SOT-23
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
Electrical Characteristics
(Ta=25 C)
Characteristic
Symbol Test Condition
Min. Typ. Max. Unit
BC856
Collector-Base Breakdown Voltage BC857 ^V(BR)CBO IC=-10 A, IE=0
BC858
BC856
Collector-Emitter Breakdown Voltage BC857 ^V(BR)CEO IC=-10 mA, IB=0
BC858
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
V(BR)EBO IE=-1 A, IC=0
BC856
BC857 ^ICBO
BC858
VCB=-70V, IE=0
VCB=-45V, IE=0
VCB=-25V, IE=0
BC856
BC857 ^ICEO
BC858
VCB=-60V, IE=0
VCB=-40V, IE=0
VCB=-25V, IE=0
-80
V
-50
-30
-65
-45
V
-30
-5
V
-0.1 _A
-0.1 _A
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-0.1 _A
DC Current Gain (Note)
BC856
BC857 ^HFE(1)
BC858
VCE=-5V, IC=-2mA
125
250
220
475
420
800
Collector-Emitter Saturation Voltage
VCE(sat) IC=-100mA, IB=-5mA
-0.5 V
Base-emitter saturatio voltage
VBE(sat) ^{IC=-100mA, IB=-5mA}
-1 V
Transition Frequency
fT
VCE =-5V, IC=-10mA ,f=100MHz 100
MHz
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