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| BC847S_15 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Silicon | |||
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RoHS
BC847S
WEJ ELECTRONIC CO.,LTD Multi-ChipTRANSISTOR (NPN)
SOT-363
FEATURES
Power dissipation
PCM : 300 mW (Tamb=25â)
Collector current
ICM
: 200 mA
Collector-base voltage
V(BR)CBO : 50
V
Operating and storage junction temperature range
TJ,Tstg: -55âto +150â
MARKING: 1C
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO Ic=10µA,IE=0
V(BR)CEO Ic=10mA,IB=0
V(BR)EBO IE=10µA,IC=0
ICBO
VCB=30V,IE=0
hFE(1) VCE=5V,IC=2mA
VCE(sat)(1) IC=10mA,IB=0.5mA
VCE(sat)(2) IC=100mA,IB=5mA
VBE(1) VCE=5V,IC=2mA
VBE(2) VCE=5V,IC=10mA
fT
VCE=5V,IC=20mA ,f=100MHz
Cob
VCB=10V,IE=0,f=1MHz
MIN TYP MAX UNIT
50
V
45
V
6
V
15 nA
110
630
0.25 V
0.65 V
0.58
0.7 V
0.77 V
200
MHz
2
pF
WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:wej@yongerjia.com
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