BC846 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistors

RoHS
BC846-BC848
NPN SILICON TRANSISTOR
WEJ ELECTRONIC CO.,LTD Features
Power dissipation
P_CM : 0.3 W (Tamb=25 C)
Pluse Drain
I_CM : 0.1 mA
Reverse Voltage
V_(BR)CBO : BC846 80V
BC847 50V
BC848 30V
Operating and storage junction temperature range
T_j, T_stg : -55 C to +150 C
1
1.
2.4
1.3
SOT-23
3
2
1.BASE
2.EMITTER
3.COLLECTOR
Unit:mm
Electrical Characteristics
Characteristic
Symbol Test Condition
BC846
Collector-Base Breakdown Voltage BC847 ^V(BR)CBO IC=10 A, IE=0
BC848
BC846
Collector-Emitter Breakdown Voltage BC847 ^V(BR)CEO IC=10 mA, IB=0
BC848
Emitter-Base Breakdown Voltage
V(BR)EBO IE=1 A, IC=0
Collector Cut-off Current
BC846
BC847 ^ICBO
BC848
VCB=70V, IE=0
VCB=45V, IE=0
VCB=25V, IE=0
Collector Cut-off Current
BC846
BC847 ^ICEO
BC848
VCB=60V, IE=0
VCB=40V, IE=0
VCB=25V, IE=0
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
DC Current Gain (Note)
BC846
BC847 ^HFE(1)
BC848
VCE=5V, IC=2mA
Collector-Emitter Saturation Voltage
Base-emitter saturatio voltage
VCE(sat) IC=100mA, IB=5mA
VBE(sat) ^{IC=100mA, IB=5mA}
Transition Frequency
fT
VCE=5V, IC=10mA ,f=100MHz
(Ta=25 C)
Min. Typ. Max. Unit
80
V
50
30
65
45
V
30
5
V
0.1 _A
0.1 _A
0.1 _A
125
250
220
475
420
800
0.5 V
1
V
100
MHz
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