BC817-16_15 Datasheet, PDF (1/2 Pages) SHENZHEN YONGERJIA INDUSTRY CO.,LTD – NPN EPTTAXIAL SILICON TRANSISTOR

RoHS
BC817-16/-25/40
NPN EPTTAXIAL SILICON TRANSISTOR
SURFACE MOUNT SMALL
SIGANL TRANSISTORS
WEJ ^{ELECTRONIC ABSOLUTE MAXIMUM RATINGS}
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Colteetor Current
Peak Fmitter Current
Power Dissipation Tsb=50 ^oC(Note1)
Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
Ic
IcM
IEM
PD
Tj
Tstg
Rating
45
50
1000
1000
800
310
150
-65~150
ELECTRICAL CHARACTERISTICS
Charactcristic
Symbol MIN. TYP. MAX. Unit
DC Current Gain Current Gain Group-16
-10
-25
160
-40
Current Gain Group-16
250
Hfe ₆₀
-25
100
-40
170
Collector-Emitter Saturation Voltage
Vce(sat)
Base- _{Emitter Voltage}
Vbc
Collector-Emitter Cutoff _Current
Ices
Emitter-Base Cutoff Current
Gain Bandwidth Product
Iebo
fT
100
250
400
600
0.7
1.2
100
5.0
100
Collector-Base Capacitanee
Ccbo
12
Note:Device mounted on ceramic substrate 0.7mmX2.5mm² area.
DEVICE MARKING:
BC817-16=6A
BC817-25=6B
BC817-40=6C
CO.,LTD
(Ta=25 ^oC)
Unit
V
V
mA
mA
mA
mW
O_C
O
C
(Ta=25 ^oC)
Test Conditions
VCe=1.0V, IC=100mA
VCe=1.0V, IC=300mA
IC=500mA, IB=50mA
VCe=1.0V, IC=300mA
VCe=45V,
VCe=25V, Tj=150 ^o
Veb=4.0V
VCe=5V, IC=10mA
f=50MHz
VCb=10V,f=1.0MHz
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