BC640 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – Transistors SWITCHING AND AMPLIFIER APPLICATIONS

RoHS
BC640
BC640 TRANSISTOR (PNP)
D FEATURES
Power dissipation
T _PCM:
0.83 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
Collector-base voltage
-1 A
O _V(BR)CBO:
-100 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
C _{DC current gain}
E _{Collector-emitter saturation voltage}
L _{Base-emitter voltage}
E _{Transition frequency}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Test conditions
Ic= -100µA, IE=0
Ic=- 1mA, IB=0
IE= -100µA, IC=0
VCB=-30V, IE=0
VEB= -5V, IC=0
VCE= -2V, IC=- 5mA
VCE= -2V, IC=- 150mA
IC=- 500mA, IB= -50mA
VCE= -2V, IC= -500mA
VCE= -5V, IC=- 50mA,
MIN TYP MAX UNIT
-100
V
- 80
V
-5
V
-0.1 µA
- 0.1 µA
40
63
250
-0.5 V
-1
V
100
MHz
J _{CLASSIFICATION OF hFE(2)}
E_Rank
W^Range
A
63-160
B
100-250
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