BC639 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

RoHS
BC639
BC639 TRANSISTOR (NPN)
D FEATURES
Power dissipation
T _PCM:
1 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
Collector-base voltage
1A
O _V(BR)CBO:
100 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O Collector-emitter breakdown voltage
Emitter-base breakdown voltage
R _{Collector cut-off current}
T _{Emitter cut-off current}
EC DC current gain
L _{Collector-emitter saturation voltage}
E _{Base-emitter voltage}
WEJ ^{Transition frequency}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE
fT
Test conditions
Ic= 100µA, IE=0
Ic= 1mA, IB=0
IE= 100µA, IC=0
VCB= 30V, IE=0
VEB= 5V, IC=0
VCE= 2V, IC= 5mA
VCE= 2V, IC= 150mA
VCE= 2V, IC= 500mA
IC= 500mA, IB= 50mA
VCE= 2V, IC= 500mA
VCE= 5V, IC= 50mA,
MIN TYP MAX UNIT
100
V
80
V
5
V
0.1 µA
0.1 µA
25
40
160
25
0.5 V
1
V
100
MHz
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