BC556B Datasheet, PDF (1/1 Pages) ON Semiconductor – Amplifier Transistors

RoHS
BC556B/57ABC/58B
BC556, B
BC557, A, B, C TRANSISTOR (PNP)
TO-92
BC558, B _FEATURES
D _{Power dissipation}
P_CM:
T _{Collector current}
0.625 W (Tamb=25℃)
I_CM:
.,L ^{Collector-base voltage}
-0.1 A
V_CBO:
BC556 -80 V
BC557 -50 V
BC558 -30 V
O _{Operating and storage junction temperature range}
1. COLLECTOR
2. BASE
3. EMITTER
123
C T_J, T_stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions MIN MAX UNIT
IC Collector-base breakdown voltage
BC556
-80
BC557
VCBO
Ic= -100µA, IE=0 -50
V
BC558
-30
N _{Collector-emitter breakdown voltage}
BC556
-65
BC557
VCEO
IC= -2mA , IB=0
-45
V
O _BC558
-30
R _{Emitter-base breakdown voltage}
VEBO
IE= -100µA, IC=0
-6
V
T Collector cut-off current
BC556
BC557
BC558
EC ^{Collector cut-off current}
BC556
BC557
BC558
L _{Emitter cut-off current}
EJ ^{E DC current gain}
BC556
BC557
BC558
BC556
BC557
BC558
BC557A
BC556B/BC557B/BC558B
BC557C
W_{Collector-emitter saturation voltage}
VCB=- 70 V, IE=0
ICBO
VCB= -45 V, IE=0
VCB= -25V, IE=0
VCE= -60 V, IB=0
ICEO
VCE= -40 V, IB=0
VCE= -25 V, IB=0
-0.1 µA
-0.1 µA
IEBO
VEB= -5 V, IC=0
-0.1 µA
hFE(1)
VCE=-5V, IC= -2mA
120 500
120 800
120 800
120 220
180 460
420 800
VCE(sat) IC=-100mA, IB= -5mA
-0.3 V
Base-emitter saturation voltage
VBE(sat) IC= -100mA, IB=-5mA
-1
V
Transition frequency
VCE= -5V, IC= -10mA
fT
150
f = 100MHz
MHz
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