BC546B Datasheet, PDF (1/1 Pages) Micro Commercial Components – NPN Silicon Amplifier Transistor 625mW

RoHS
BC546, B
BC547, A, B, C
BC548, A, B, C
TRANSISTOR (NPN)
BC546/47/48/A/B/C
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Power dissipation
P_CM:
Collector current
0.625 W (Tamb=25℃)
I_CM:
Collector-base voltage
0.1 A
V_CBO:
BC546 80 V
BC547 50 V
BC548 30 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1. COLLECTOR
2. BASE
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BC546
BC547
BC548
BC546
BC547
BC548
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC547A/548A
BC546B/BC547B/BC548B
BC546C/BC547C/BC548C
Collector-emitter saturation voltage
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE(1)
VCE(sat)
Test conditions
Ic= 100µA , IE=0
IC= 1mA , IB=0
IE= 10µA, IC=0
VCB= 70V, IE=0
VCB= 50 V, IE=0
VCB= 30V, IE=0
VCE= 60 V, IB=0
VCE= 45 V, IB=0
VCE= 30 V, IB=0
VEB= 5V, IC=0
VCE=5V, IC= 2mA
IC=100 mA, IB= 5mA
MIN MAX UNIT
80
50
V
30
65
45
V
30
6
V
0.1
µA
0.1
µA
0.1
µA
110 450
110 800
110 800
110 220
200 450
420 800
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC= 100 mA, IB=5mA
1
V
Transition frequency
VCE= 5V, IC= 10mA
fT
150
f = 100MHz
MHz
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