BC369 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP medium power transistor

RoHS
BC369
BC369 TRANSISTOR (PNP)
D FEATURE
Power dissipation
T _PCM:
0.625 W (Tamb=25℃)
.,L ^{Collector current}
I_CM:
-1 A
Collector-base voltage
O _V(BR)CBO:
-25 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
IC _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
N _Parameter
O _{Collector-base breakdown voltage}
R _{Collector-emitter breakdown voltage}
T _{Emitter-base breakdown voltage}
C _{Collector cut-off current}
Emitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
MIN
Ic= -100µA, IE=0
-25
IC= -10 mA , IB=0
-20
IE= -100µA, IC=0
-5
VCB= -25V, IE=0
VEB= -5V, IC=0
E _{DC current gain}
hFE
VCE=-1V, IC= -0.5mA
85
EL _{Collector-emitter voltage}
VCE(sat)
IC= -1A, IB= -100mA
Base-emitter voltage
WEJ ^{Transition frequency}
VBE(on)
fT
IC= -1A , VCE= -1V
VCE= -5V, IC= -10mA
65
f =20MHz
MAX
-10
-10
375
-0.5
-1
UNIT
V
V
V
µA
µA
V
V
MHz
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