BC350 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP)

RoHS
BC350
BC350 TRANSISTOR (PNP)
FEATURES
TO-92
TD _{Power dissipation}
.,L ^PCM:
0.3 W (Tamb=25℃)
Collector current
I_CM:
-0.1 A
Collector-base voltage
O _V(BR)CBO:
-50 V
Operating and storage junction temperature range
C _{TJ, Tstg: -55℃ to +150℃}
1. EMITTER
2. BASE
3. COLLECTOR
123
IC ^{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
N _{Collector-base breakdown voltage}
O _{Collector-emitter breakdown voltage}
R _{Emitter-base breakdown voltage}
T _{Collector cut-off current}
Collector cut-off current
C _{Emitter cut-off current}
E _{DC current gain}
L _{Collector-emitter saturation voltage}
E _{Base-emitter saturation voltage}
WEJ ^{Transition frequency}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCEsat
VBEsat
fT
Test conditions
Ic= -100µA, IE=0
IC= -1mA, IB=0
IE= -100µA, IC=0
VCB=-50V, IE=0
VCE=-35V, IB=0
VEB= -3V, IC=0
VCE=-5 V, IC= -2mA
IC= -10mA, IB= -1mA
IC= -10mA, IB= -1mA
VCE=-5V,IC=-10mA,
f=30MHz
MIN TYP
-50
-45
-5
40
125
MAX
-0.1
-0.1
-0.1
450
-0.3
-1
UNIT
V
V
V
µA
µA
µA
V
V
MHz
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]