BC327 Datasheet, PDF (1/1 Pages) Motorola, Inc – Amplifier Transistors(PNP)

RoHS
BC327/BC328
BC327/ BC328 TRANSISTOR (PNP)
FEATURES
Power dissipation
D _PCM:
0.625 W (Tamb=25℃)
TO-92
T _{Collector current}
I_CM:
-0.8 A
.,L ^{Collector-base voltage}
V_CBO:
BC327 -50 V
BC328 -30 V
O _{Operating and storage junction temperature range}
1. COLLECTOR
2. BASE
3. EMITTER
123
T_J, T_stg: -55℃ to +150℃
C _{ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)}
Parameter
Symbol
Test conditions
MIN
TYP
MAX
IC Collector-base breakdown voltage
BC327
BC328
N Collector-emitter breakdown voltage
BC327
O _BC328
VCBO
VCEO
Ic= -100µA , IE=0
-50
-30
IC= -10 mA , IB=0
-45
-25
Emitter-base breakdown voltage
VEBO
IE= -10µA, IC=0
-5
R _{Collector cut-off current}
ICBO
T _BC327
VCB= -45V, IE=0
-0.1
BC328
VCB= -25V, IE=0
-0.1
C _{Collector cut-off current}
BC327
ICEO
VCE= -40V, IB=0
-0.2
E_BC328
VCE= -20 V, IB=0
-0.2
L _{Emitter cut-off current}
IEBO
VEB= -4 V, IC=0
-0.1
E _{DC current gain}
hFE(1)
VCE=-1V, IC= -100mA
100
630
hFE(2)
VCE=-1V, IC= -300mA
40
J _{Collector-emitter saturation voltage}
VCE(sat)
IC=-500 mA, IB= -50 mA
-0.7
Base-emitter saturation voltage
VBE(sat)
IC= -500 mA, IB=-50 mA
-1.2
WE^{Transition frequency}
fT
VCE= -5V, IC= -10mA
260
f = 100MHz
UNIT
V
V
V
V
V
µA
µA
µA
µA
µA
V
V
MHz
h_FE CLASSIFICATION
Classification
16
25
40
h_FE1
100-250
160-400
250-630
h_FE2
60-
100-
170-
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