BC184 Datasheet, PDF (1/1 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTORS

RoHS
BC184-B-C
BC184, B, C TRANSISTOR (NPN)
D _FEATURES
Power dissipation
T _PCM:
0.35
Collector current
.,L ^ICM:
0.1
Collector-base voltage
V_(BR)CBO:
45
W (Tamb=25℃)
A
V
O _{Operating and storage junction temperature range}
C _{TJ, Tstg: -55℃ to +150℃}
TO-92
1. COLLECTOR
2. BASE
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
IC _Parameter
N _{Collector-base breakdown voltage}
Collector-emitter breakdown voltage
O _{Emitter-base breakdown voltage}
R _{Collector cut-off current}
T _{Collector cut-off current}
C _{Emitter cut-off current}
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
Test conditions
Ic=10µA, IE=0
IC= 2mA , IB=0
IE=100µA. IC=0
VCB=30V, IE=0
VCE=30V, IB=0
VEB=4 V, IC=0
MIN MAX UNIT
45
V
30
V
6
V
15
nA
0.1
µA
15
nA
LE ^{DC current gain}
BC184
BC184B
BC184C
hFE(1)
VCE=5V, IC= 2mA
240 900
240 500
450 900
E _{Collector-emitter saturation voltage}
J _{Base-emitter saturation voltage}
WE^{Transition frequency}
VCE(sat)
IC=100mA, IB= 5mA
0.6
V
VBE(sat)
IC= 100mA, IB=5mA
1.2
V
VCE= 5V, IC= 10mA
fT
150
f = 100MHz
MHz
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