BB910 Datasheet, PDF (1/2 Pages) NXP Semiconductors – VHF variable capacitance diode

RoHS
BB910
VHF VARIABLE CAPACITANCE DIODES
WEJ ELECTRONIC CO.,LTD FEATURES
Excellent Iinearity
Matched to 2.5%
C28:2.5:ratio:16
Low series resistance
APPLICATIONS
Electronic tuning in VHF televsion tunors, band B up
to 460 Mhz
DESCRIPTION
The BB910 is a variable capacitance drode, fabricated
in planar technology.
Bb910
SOD-123
0.022 0.0004¡±
0.55 0.1
2.7
+0.2
-0.1
0.108¡±^{+0.008¡±}
-0.004¡±
3.3 0.2
0.132¡± +0.008¡± _{0.012¡±}
0.6 ^+0.2
-0.1
0.
004¡±
+0.008¡±
-0.004¡±
0.3
0 . 0 0 6¡ ± 0 . 1 5
MAX
1.1 ^+0.2
-0.1
0.044^{+0.2 ¡±}
-0.1
0.004¡± 0.1 0.010¡± 0.25
MIN
Dimensions in inches and (millimeters)
LIMITING VALUES
Continuous Reverse Voltage
Forward Continuous Current at TA=25^OC
Junction Temperature
Storage Temperature Range
Symbol
VR
IF
Tj
Tstg
Min.
-55
-55
Max.
30
20
+100
+150
Units
V
mA
O_C
O
C
ELECTRICAL CHARACTERISTICS
Reverse current
Diode serles resistance
Diode capacitance
Capacitance ratlo
Symbol
IR
RD
Cd
Cd(0.5v)
C d(28v)
Conditions
VR=28V; see Fig.2
VR=28V; Tj=85^oC see Fig.2
F=100MHz; note1
VR=0.5V; f=1MHz see Fig.1 and 3
VR=28V; f=1MHz see Fig.1 and 3
F=1MHz
Capacitance matching
Cd
Cd
VR=0.5V to 28V
Min. Typ.
38
2.3
14
Max.
10
200
1
2.7
Units
nA
nA
pF
pF
2.5
%
NOTE:
1.VR is the value at which Cd=40pF
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[e-mail]