BAW56W_15 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – Small Signal Switching Diode

RoHS
BAW56W
SOT-323 Plastic-Encapsulate DIODE
WEJ ^{ELECTRONIC CO.,LTD BAW56W SWITCHINGDIODE}
FEATURES
Power dissipation
P_D:
200 mW (Tamb=25℃)
Collector current
I_O:
150 mA
Collector-base voltage
V_R:
75 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-323
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
Marking: KJC
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
Symbol
V(BR) R
IR
VF
CD
trr
Test conditions
IR= 100µA
VR=75V
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=0V, f=1MHz
IF=IR=10mA
Irr=0.1×IR
MIN
MAX
75
2.5
715
855
1000
1250
2
4
UNIT
V
µA
mV
pF
nS
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